may 2014 ?2014 fairchild semiconductor corporation FDMA86265P rev.c www.fairchildsemi.com 1 FDMA86265P p-channel powertrench ? mosfet d d s g d d pin 1 drain source microfet 2x2 (bottom view) bottom drain con- d d d d s g bottom drain contact FDMA86265P p-channel powertrench ? mosfet -150 v, -1 a, 1.2 features ? max r ds(on) = 1.2 at v gs = -10 v, i d = -1 a ? max r ds(on) = 1.4 at v gs = -6 v, i d = -0.9 a ? low profile - 0.8 mm maximum in the new package microfet 2x2 mm ? very low rds-on mid voltage p-channel silicon technology optimised for low qg ? this product is optimised for fa st switching applications as well as load switch applications ? 100% uil tested ? rohs compliant general description this p-channel mosfet is produced using fairchild semiconductor?s advanced powertrench ? process that has been optimized for the on-state resistance and yet maintain superior switching performance. applications ? active clamp switch ? load switch mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -150 v v gs gate to source voltage 25 v i d drain current -continuous t a = 25 c (note 1a) -1 a -pulsed -2 e as single pulse avalanche energy (note 3) 6 mj p d power dissipation t a = 25 c (note 1a) 2.4 w power dissipation t a = 25 c (note 1b) 0.9 t j , t stg operating and storage junction temperature range -55 to + 150 c r ja thermal resistance, junction to ambient (note 1a) 52 c/w r ja thermal resistance, junction to ambient (note 1b) 145 device marking device package reel size tape width quantity 265 FDMA86265P microfet 2x2 7 ?? 12 mm 3000 units
www.fairchildsemi.com 2 ?2014 fairchild semiconductor corporation FDMA86265P rev.c FDMA86265P p-channel powertrench ? mosfet electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = -250 a, v gs = 0 v -150 v bv dss t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25 c -125 mv/c i dss zero gate voltage drain current v ds = -120 v, v gs = 0 v -1 a i gss gate to source leakage current v gs = 25 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 a-2-3.2-4v v gs(th) t j gate to source threshold voltage temperature coefficient i d = -250 a, referenced to 25 c 5 mv/c r ds(on) static drain to source on resistance v gs = -10 v, i d = -1 a 0.86 1.2 v gs = -6 v, i d = -0.9 a 0.95 1.4 v gs = -10 v, i d = -1 a, t j = 125 c 1.53 2.2 g fs forward transconductance v ds = -10 v, i d = -1 a 1.9 s c iss input capacitance v ds = -75 v, v gs = 0 v, f = 1 mhz 158 210 pf c oss output capacitance 16 25 pf c rss reverse transfer capacitance 0.7 5 pf r g gate resistance 0.1 3 7.5 t d(on) turn-on delay time v dd = -75 v, i d = -1 a, v gs = -10 v, r gen = 6 5.8 12 ns t r rise time 2.2 10 ns t d(off) turn-off delay time 8 16 ns t f fall time 6.4 13 ns q g(tot) total gate charge v gs = 0 v to -10 v v dd = -75 v, i d = -1 a 2.8 4 nc q gs total gate charge 0.8 nc q gd gate to drain ?miller? charge 0.7 nc v sd source to drain diode forward voltage v gs = 0 v, i s = -1 a (note 2) -0.87 -1.3 v t rr reverse recovery time i f = -1 a, di/dt = 100 a/ s 50 80 ns q rr reverse recovery charge 78 124 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. starting t j = 25 c; p-ch: l =3 mh, i as = -2 a, v dd = -150 v, v gs = -10 v. 100% test at l = 0.1 mh, i as = -9 a. a. 52 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 145 c/w when mounted on a minimum pad of 2 oz copper. g df ds sf ss g df ds sf ss
www.fairchildsemi.com 3 ?2014 fairchild semiconductor corporation FDMA86265P rev.c FDMA86265P p-channel powertrench ? mosfet typical characteristics t j = 25 c unless otherwise noted figure 1. 012345 0.0 0.5 1.0 1.5 2.0 pulse duration = 80 p s duty cycle = 0.5% max v gs = -10 v v gs = -8 v v gs = -6 v v gs = -5 v v gs = -4.5 v -i d , drain current (a) -v ds , drain to source voltage (v) on region characteristics figure 2. 0.0 0.5 1.0 1.5 2.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = -8 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance -i d , drain current (a) v gs = -6 v v gs = -5 v v gs = -10 v v gs = -4.5 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 i d = -1 a v gs = -10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 45678910 0 1000 2000 3000 4000 t j = 125 o c i d = -1 a t j = 25 o c -v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 23456 0.0 0.5 1.0 1.5 2.0 t j = 150 o c v ds = -5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.00.20.40.60.81.01.2 0.001 0.01 0.1 1 4 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
www.fairchildsemi.com 4 ?2014 fairchild semiconductor corporation FDMA86265P rev.c FDMA86265P p-channel powertrench ? mosfet figure 7. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 i d = -1 a v dd = -100 v v dd = -50 v -v gs , gate to source voltage (v) q g , gate charge (nc) v dd = -75 v gate charge characteristics figure 8. 0.1 1 10 100 0.1 1 10 100 1000 f = 1 mhz v gs = 0 v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage f i g u r e 9 . u n c l a m p e d i n d u c t i v e swit ching capability 0.001 0.01 0.1 1 1 2 3 4 5 6 7 8 9 10 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) -i as , avalanche current (a) figure 10. 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 v gs = -6 v r t ja = 52 o c/w v gs = -10 v -i d , drain current (a) t a , ambient temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs ambient temperature figure 11. 0.1 1 10 100 500 0.001 0.01 0.1 1 10 curve bent to measured data 1 s 100 p s dc 100 ms 10 ms 1 ms 10 s -i d , drain current (a) -v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 145 o c/w t a = 25 o c f o r w a r d b i a s s a f e operating area figure 12. 10 -5 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 2000 p ( pk ) , peak transient power (w) t, pulse width (sec) single pulse r t ja = 145 o c/w t a = 25 o c s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 5 ?2014 fairchild semiconductor corporation FDMA86265P rev.c FDMA86265P p-channel powertrench ? mosfet figure 13. 10 -5 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.0005 0.001 0.01 0.1 1 r(t), normalized effective transient thermal resistance single pulse duty cycle-descending order t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: z t ja (t) = r(t) x r t ja r t ja = 145 o c/w duty cycle, d = t 1 / t 2 peak t j = p dm x z t ja (t) + t a junction-to-ambient transient thermal response curve typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 6 ?2014 fairchild semiconductor corporation FDMA86265P rev.c FDMA86265P p-channel powertrench ? mosfet dimensional outline and pad layout package drawings are provided as a service to customers considering fairchild compon ents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild's worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconducto r?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/pac kagedetails.html?id=pn_mldeb-c06 . b. dimensions are in millimeters. c. dimensions and tolerances per a. does not fully conform to jedec registration asme y14.5m, 1994 0.10 cab 0.05 c top view bottom view recommended land pattern opt 1 0. 10 c 0.08 c b a c 2.00 2.00 0.05 0.00 0.10 c 2x 2x 0.8 max side view seating plane 0. 10 c (0.20) 0.33 0.20 13 4 6 4 6 3 1 pin #1 ident 0.65 1. 30 1.35 1. 05 0.40 typ 0.65 typ 0.35 0.25 2. 30 1. 00 mo-229 dated aug/2003 0. 61 0. 51 0.30 0.66 recommended land pattern opt 2 4 6 3 1 1.35 (0.475) 1. 05 0.40 typ 0.65 typ 2. 30 1. 00 no t rac es allowed in this area pin #1 location 1.05 0.95 d. drawing filename: mkt-mlp06lrev3. 0.50 0.15 0.50 0.20 0.45 (0.20) 1.00 0.80 6x 6x
FDMA86265P p-channel powertrench ? mosfet ?2014 fairchild semiconductor corporation 7 www.fairchildsemi.com FDMA86265P rev.c trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairch ild does not assume any liability arising out of the application or use of any product or circuit described herein; neit her does it convey any license under its pat ent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life su pport device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm greenbridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver ? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost ? tinybuck ? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specificati ons for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time withou t notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experi ence many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourage s customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i68 tm ?
|
